Academic Experts
Academic Experts
Dr. Damanpreet Kaur
Assistant Professor (Grade I)
damanpreet.kaur@jiit.ac.in
Biography

Dr. Damanpreet Kaur did her Bachelors and Masters in Physics (Honours School) from Department of Physics, Panjab University, Chandigarh. Her master’s dissertation involved using first principle calculations to study the adsorption of sulphur atoms on a gold monolayer. After this, she switched to a more experimental regime and did her Ph.D. degree titled “Strategies towards Realization of High Performance Solar-blind Photodetectors based on Gallium Oxide Thin Films” from the Department of Physics, IIT Ropar in 2024 in the field of ultra-wide bandgap semiconductors. After completing her Ph.D., she transitioned to a postdoctoral role at IIT Ropar working for a year on the synthesis optimization of large area 2D materials for ultra-fast photodetection. Dr. Kaur joined as Assistant Professor (Grade I) in Department of Physics and Material Science and Engineering, JIIT Noida-62 in July 2025. Her major research interests are ultra-wide band gap semiconductors for optoelectronics and power devices, integration of UWBGs with low-dimensional materials for enhanced transport properties and the development of extreme environment electronics.

Research Highlights
  1. Synthesis and development of ultra-wide bandgap (UWBG) semiconductor films for space applications
  2. R&D of heterostructures of UWBGs with low-dimensional materials to tailor specific properties
  3. Using advanced characterization techniques for establishing process-properties-performance linkages
  4. Complete device fabrication and testing, ranging from proof-of-concept devices to packaged prototype devices at the TRL level for technology transfer to industry
Areas Of Interest
  • Ultra-wide bandgap semiconductors
  • optoelectronics
  • heterojunctions of 2D materials
  • Interfacial dynamics studies
Publications
  • D. Kaur and M. Kumar, “A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects”, Advanced Optical Materials, vol. 9, no. 9, pp. 2002160, May 2021
  • D. Kaur, R. Dahiya, Shivani and M. Kumar, “Interface-induced origin of Schottky-to-Ohmic-to-Schottky conversion in non-conventional contact to β-Ga2O3”, Applied Physics Letters, vol. 124, no. 2, pp. 021601, January 2024
  • D. Kaur, R. Dahiya, V. Sheokand, G. Bassi and M. Kumar., “Ultrafast, self-powered and highly-stable PtS-Ga2O3 heterojunction photodetector for broad-spectrum sensing”, Surfaces and Interfaces, vol. 61, pp. 106125, March 2025
  • D. Kaur et al., “Nanopatterning Induced Si Doping in Amorphous Ga2O3 for Enhanced Electrical Properties and Ultra-Fast Photodetection”, Small, vol. 20, no. 35, pp. 2309277, August 2024
  • D. Kaur, S. Debata, D. P. Singh and M. Kumar, “Strain effects on the optoelectronic performance of ultra-wide band gap polycrystalline β-Ga2O3 thin film grown on differently-oriented Silicon substrates for solar blind photodetector”, Applied Surface Science, vol. 616, pp. 156446, April 2023